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| APTGT400A120G Phase leg Fast Trench + Field Stop IGBT(R) Power Module VBUS Q1 G1 VCES = 1200V IC = 400A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Fast Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant E1 OUT Q2 G2 E2 0/VBUS G1 E1 VBUS 0/VBUS OUT E2 G2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Reverse Bias Safe Operating Area 800A @ 1100V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT400A120G - Rev 1 * Specification of IGBT device but output current must be limited to 500A to not exceed a delta of temperature greater than 100C for the connectors. July, 2006 Max ratings 1200 560 * 400 800 20 1785 Unit V A V W APTGT400A120G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE =15V IC = 400A Tj = 125C VGE = VCE , IC = 4 mA VGE = 20V, VCE = 0V Min 1.4 5.0 Typ 1.7 2.0 5.8 Max 750 2.1 6.5 800 Unit A V V nA Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 400A R G = 1.2 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 400A R G = 1.2 VGE = 15V Tj = 125C VBus = 600V IC = 400A Tj = 125C R G = 1.2 Min Typ 28 1.6 1.2 260 30 420 80 290 50 520 100 40 Max Unit nF ns ns mJ 40 Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Test Conditions VR=1200V IF = 400A VGE = 0V Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C IF = 400A VR = 600V di/dt =4000A/s Min 1200 Typ Max 700 900 Unit V A A 400 1.6 1.6 170 280 36 72 20 36 2.1 V ns C mJ July, 2006 2-5 APTGT400A120G - Rev 1 Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C www.microsemi.com APTGT400A120G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.07 0.13 150 125 100 5 3.5 280 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT400A120G - Rev 1 July, 2006 APTGT400A120G Typical Performance Curve 800 700 600 IC (A) 500 400 300 200 100 0 0 1 2 VCE (V) 3 4 Output Characteristics (V GE=15V) Output Characteristics 800 700 TJ=125C TJ=25C TJ = 125C VGE =17V VGE=13V VGE=15V 600 IC (A) 500 400 300 200 100 0 0 1 2 VCE (V) VGE =9V 3 4 800 700 600 Transfert Characteristics TJ =25C T J=125C 100 80 E (mJ) 60 40 20 0 Energy losses vs Collector Current VCE = 600V VGE = 15V RG = 1.2 T J = 125C Eon Eoff Er Eon IC (A) 500 400 300 200 100 0 5 6 7 8 9 T J=125C 10 11 12 0 100 200 300 400 500 600 700 800 IC (A) Reverse Bias Safe Operating Area VGE (V) Switching Energy Losses vs Gate Resistance 100 90 80 E (mJ) 70 60 50 40 30 20 10 0 0 2 4 6 8 Gate Resistance (ohms) 10 900 VCE = 600V VGE =15V I C = 400A TJ = 125C Eon 800 700 600 IF (A) Eoff Er 500 400 300 200 100 0 0 300 600 900 VCE (V) 1200 1500 VGE=15V TJ=125C RG=1.2 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.08 Thermal Impedance (C/W) 0.9 0.06 0.7 0.5 0.3 0.02 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 IGBT 0.04 0 0.00001 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT400A120G - Rev 1 0.05 July, 2006 APTGT400A120G Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 60 50 ZVS VCE=600V D=50% RG=1.2 TJ=125C Tc=75C Forward Characteristic of diode 800 700 600 500 IF (A) 400 300 200 T J=125C T J=25C 40 30 20 10 0 0 100 200 Hard switching ZCS TJ=125C 100 0 300 IC (A) 400 500 0 0.4 0.8 1.2 1.6 V F (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.14 Thermal Impedance (C/W) 0.12 0.1 0.08 0.06 0.04 0.02 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.9 0.7 0.5 0.3 Diode 0 0.00001 rectangular Pulse Duration (Seconds) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT400A120G - Rev 1 July, 2006 |
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